Method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsKatsuaki Natori, Hiroshi Toyoda, Koji Yamakawa, Takayuki Beppu, Masayuki Kitamura
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).
Claims20
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) adsorbing an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof;
- (b) supplying a Mo material over the insulating film;
- and
- (c) supplying a reducing agent over the insulating film, wherein the insulating film is formed above a substrate,
- wherein the insulating film comprises a metal oxide.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a stacked structure including first insulating films and second insulating films alternately disposed on top of one another;
- forming an opening through the stacked structure;
- forming a semiconductor film and a charge storage layer in the opening;
- removing the first insulating films to form cavities in the stacked structure;
- and
- forming third insulating films and molybdenum films in the cavities, respectively,
- wherein the step of forming molybdenum films comprises the steps of:
- adsorbing, over the third insulating film, at least one adsorbing material, selected from the group consisting of H2O, HF, NO, NO2 and NF3, after the formation of the third insulating films;
- supplying a Mo material after the adsorption of the adsorbing material;
- and
- supplying a reducing agent, and
- wherein the step of adsorbing an adsorbing material, the step of supplying a Mo material, and the step of supplying a reducing agent are performed repeatedly,
- wherein the third insulating film comprises a metal oxide.
Dependencies are inferred from the claim text.