Non-volatile storage device

A non-volatile storage device, comprising:

• a first layer including a source line;
• a second layer over the first layer;
• a stacked body including a plurality of conductive films stacked over the second layer;
• and
• a semiconductor pillar which penetrates the stacked body and the second layer and contacts the source line, wherein
• the semiconductor pillar includes a semiconductor film provided along an extending direction of the semiconductor pillar and a memory film provided on a periphery of the semiconductor film,
• the memory film includes a first portion between the stacked body and the semiconductor film and a second portion between the second layer and the semiconductor film, and
• an outer periphery of the second portion, in a direction perpendicular to the extending direction, has a portion that is wider than an outer periphery of the first portion on a second layer side of the stacked body.

A non-volatile storage device comprising:

• a first layer disposed in a first plane;
• a second layer over the first layer;
• a first selector gate over the second layer,
• a stacked body including a plurality of conductive films separated by an insulating film and stacked over the first selector gate;
• a second selector gate over the stacked body, and
• a semiconductor pillar which penetrates the second selector gate, the stacked body, the first selector gate and the second layer and extends to the first layer, wherein
• the first layer includes a source line that contacts the semiconductor pillar,
• the semiconductor pillar extends in a first direction perpendicular to the first plane and includes a semiconductor film parallel to the first direction and a memory film on a periphery of the semiconductor film,
• the memory film includes a first portion between the stacked body and the semiconductor film and a second portion between the second layer and the semiconductor film, and
• the second portion is under the first selector gate.