Semiconductor device including contact structure and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A semiconductor device may include a plurality of first contact structures, plug-shaped second contact structures configured to be connected to a first number of the plurality of first contact structures, respectively, a slit-shaped second contact structure configured to be connected to a second number of the plurality of first contact structures, adjacent in a first direction, and a third contact structure configured to be connected to sidewalls of the plug-shaped second contact structures, adjacent in the first direction.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a transistor over a substrate;
- forming a plurality of first contact structures;
- forming plug-shaped second contact structures electrically connected to a first number of the plurality of first contact structures, respectively;
- forming a slit-shaped second contact structure to extend in a horizontal direction and directly connected to upper surfaces of first contact structures adjacent in the first direction, among the plurality of first contact structures, to electrically connect the first contact structures adjacent in the first direction to each other;
- and
- forming a third contact structure to be electrically connected to sidewalls of the plug-shaped second contact structures, adjacent in the first direction,
- wherein the plurality of first contact structures are connected to the transistor, and
- wherein the transistor includes a source region and a drain region, the source region is connected to the slit-shaped second contact structure through one of a second number of the plurality of first contact structures, and the drain region is connected to the third contact structure through one of a first number of the plurality of first contact structures and one of the plug-shaped second contact structures.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first interlayer insulating film;
- forming a plurality of first contact structures to pass through the first interlayer insulating film;
- forming an etch stop film on the first interlayer insulating film;
- forming a second interlayer insulating film on the etch stop film;
- forming plug-shaped second contact structures to pass through the etch stop film and the second interlayer insulating film and electrically connected to a first number of the plurality of first contact structures, respectively;
- forming a slit-shaped second contact structure to pass through the etch stop film and the second interlayer insulating film, to be electrically connected to second number of the plurality of first contact structures, and to extend in a first direction;
- and
- forming a third contact structure to pass through the second interlayer insulating film, to be electrically connected to sidewalls of the plug-shaped second contact structures, and to extend in the first direction.
Dependencies are inferred from the claim text.