Memory cell and semiconductor memory device with the same

A semiconductor memory device, comprising:

• a transistor laterally extending in a direction parallel to a substrate and including an active layer over the substrate, the active layer having a first end and a second end;
• bit line contact nodes formed on an upper surface and a lower surface of the first end of the active layer, respectively;
• a bit line side-ohmic contact vertically extending and connecting to the first end of the active layer and the bit line contact nodes;
• a bit line extending in a vertical direction to the substrate and connected to the bit line side-ohmic contact;
• storage contact nodes formed on an upper surface and a lower surface of the second end of the active layer, respectively;
• a storage node side-ohmic contact vertically extending and connecting to the second end of the active layer and the storage contact nodes;
• and
• a capacitor connected to the storage node side-ohmic contact,
• wherein the bit line side-ohmic contact and the storage node side-ohmic contact include a metal silicide, and
• wherein each of the bit line contact nodes and the storage contact nodes includes doped polysilicon.

A method for fabricating a semiconductor memory device, the method comprising:

• forming a stack body laterally oriented and including an active layer, the active layer including a first end and a second end;
• forming first contact nodes on upper and lower surfaces of the first end of the active layer, respectively;
• forming a first ohmic contact being vertically oriented to cover the first contact nodes and the first end of the active layer;
• and
• forming a first conductive layer connected to the first ohmic contact and vertically oriented in a direction crossing the active layer,
• wherein the first contact nodes include polysilicon, and the first ohmic contact includes metal silicide.