Drive module for GaN transistor, switch circuit and electronic device

A drive module for a GaN transistor, comprising a first pull-down transistor and a gate ringing and overshoot suppression unit, wherein:

• a first end of the first pull-down transistor is directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is connected between a second end of the first pull-down transistor and ground, and the gate ringing and overshoot suppression unit is also directly or indirectly connected to the gate of the GaN transistor;
• the gate ringing and overshoot suppression unit comprises a second pull-down transistor and a pull-down resistor, a first end of the pull-down resistor is connected to the second end of the first pull-down transistor, a second end of the pull-down resistor is connected to ground, a first end of the second pull-down transistor is connected to the second end of the first pull-down transistor, a second end of the second pull-down transistor is connected to ground, and a gate voltage of the GaN transistor is applied to a gate of the second pull-down transistor as an on/off signal which turns the second pull-down transistor on and off, wherein the voltage which is applied to the gate of the second pull-down transistor is always the same as the gate voltage of the GaN transistor;
• and
• the gate ringing and overshoot suppression unit is configured such that when the gate voltage of the GaN transistor drops, the gate ringing and overshoot suppression unit controls the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold and controls the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, wherein the first impedance is less than the second impedance.