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US 12,009,799 B2Granted
Acoustic wave device, high-frequency front-end circuit, and communication device
AssigneeMurata Manufacturing Co., Ltd.
InventorHideki Iwamoto
Life of this patent
Estimating the term…
Abstract
An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The support substrate is made of quartz. The piezoelectric layer is provided on the support substrate and is made of LiTaO3. The IDT electrode is on the piezoelectric layer and includes electrode fingers. The IDT electrode is on a negative surface side of the piezoelectric layer. The cut angle of the piezoelectric layer is equal to or more than about 39° Y and equal to or less than about 48° Y.
Claims14
An acoustic wave device comprising:
- a support substrate made of quartz;
- a piezoelectric layer on the support substrate and made of LiTaO3;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the IDT electrode is on a negative surface side of the piezoelectric layer;
- a cut angle of the piezoelectric layer is equal to or more than about 39°Y and equal to or less than about 48°Y;
- and
- an angle defined by a Z-axis of the support substrate and an X-axis of the LiTaO3 is equal to or less than about +20°.
6 more elements
An acoustic wave device comprising:
- a support substrate made of quartz;
- a piezoelectric layer on the support substrate and made of LiTaO3;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the IDT electrode is on a negative surface side of the piezoelectric layer;
- a cut angle of the piezoelectric layer is equal to or more than about 39°Y and equal to or less than about 48°Y;
- an acoustic velocity of a slow transversal wave propagating through the support substrate is equal to or higher than about 3950 m/s;
- and
- an angle defined by a Z-axis of the support substrate and an X-axis of the LiTaO3 is equal to or less than about ±20°.
7 more elements
An acoustic wave device comprising:
- a support substrate made of quartz;
- a piezoelectric layer on the support substrate and made of LiTaO3;
- and
- an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the IDT electrode is on a negative surface side of the piezoelectric layer;
- a cut angle of the piezoelectric layer is equal to or more than about 42°Y and equal to or less than about 48°Y;
- and
- an angle defined by a Z-axis of the support substrate and an X-axis of the LiTaO3 is equal to or less than about +20°.
6 more elements
Dependencies are inferred from the claim text.