Power amplifier with decreased RF return current losses

A radio-frequency (RF) power amplifier package comprising:

• a semiconductor die comprising;
• an RF power transistor comprising:
• a plurality of output bond pads;
• a plurality of input bond pads;
• a plurality of input fingers that are connected to the plurality of input bond pads;
• and
• a plurality of output fingers that are connected to the plurality of output bond pads;
• an input lead arranged on an input side of the RF power amplifier package and an output lead arranged on an output side of the RF power amplifier package;
• a plurality of first bondwire connections extending from the plurality of input bond pads towards the input side of the RF power amplifier package and connecting, either directly or indirectly, the plurality of input bond pads to the input lead;
• a plurality of second bondwire connections extending from the plurality of output bond pads towards the output side of the RF power amplifier package and connecting, either directly or indirectly, the plurality of output bond pads to the output lead;
• and
• a plurality of shields, each shield of the plurality of shields being arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger,
• wherein each shield of the plurality of shields is connected to a ground terminal of the RF power transistor,
• wherein each input finger of the plurality of input fingers, each output finger of the plurality of output fingers, and each shield of the plurality of shields are formed using a metal layer stack of multiple metal layers of which upper metal layers have a greater thickness than lower metal layers, and
• wherein:
• each input finger of the plurality of input fingers physically extends for a larger part in a region in between the input side of the RF power amplifier package and the plurality of input bond pads than in a region in between the plurality of input bond pads and the output side of the RF power amplifier package, wherein each input finger of the plurality of input fingers physically extends for more than 70% in the region in between the input side of the RF power amplifier package and the plurality of input bond pads, preferably more than 90%;
• and/or
• each output finger of the plurality of output fingers physically extends for a larger part in a region in between the plurality of output bond pads and the output side of the RF power amplifier package than in a region in between the input side of the RF power amplifier package and the plurality of output bond pads, wherein each output finger of the plurality of output fingers physically extends for more than 70% in the region in between the plurality of output bond pads and the output side of the RF power amplifier package, preferably more than 90%.