Unidirectional transient voltage suppression device

An electronic circuit comprising:

• an electrically conductive support;
• an electronic component having first and second terminals, wherein the second terminal is attached to the electrically conductive support;
• and
• a transient voltage suppression device comprising:
• a single crystal semiconductor substrate doped with a first conductivity type and comprising first and second surfaces opposing each other;
• a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending into the substrate from the first surface;
• a first electrically conductive electrode on the first surface contacting the semiconductor region;
• a second electrically conductive electrode on the second surface contacting the substrate and attached to the electrically conductive support;
• a first interface between the substrate and the semiconductor region forming a junction of a transient voltage suppression diode;
• and
• a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming a junction of a Schottky diode, the transient voltage suppression diode and the Schottky diode being coupled between the first and the second electrically conductive electrodes in anti-series configuration.

An electronic circuit comprising:

• at least one electronic component;
• and
• a transient voltage suppression device arranged in parallel with the electronic component and comprising:
• a single crystal semiconductor substrate doped with a first conductivity type and comprising first and second surfaces opposing each other;
• a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending into the substrate from the first surface;
• a first electrically conductive electrode on the first surface contacting the semiconductor region;
• a second electrically conductive electrode on the second surface contacting the substrate;
• a first interface between the substrate and the semiconductor region forming a junction of a transient voltage suppression diode;
• and
• a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming a junction of a Schottky diode, the transient voltage suppression diode and the Schottky diode being coupled between the first and the second electrically conductive electrodes in anti-series configuration.

A transient voltage suppression device comprising:

• a single crystal semiconductor substrate doped with a first conductivity type and comprising first and second surfaces opposing each other;
• a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending into the substrate from the first surface;
• a first electrically conductive electrode on the first surface contacting the semiconductor region;
• a second electrically conductive electrode on the second surface contacting the substrate;
• a first interface between the substrate and the semiconductor region forming a junction of a transient voltage suppression diode;
• and
• a second interface between the substrate and the second electrically conductive electrode forming a junction of a Schottky diode, the transient voltage suppression diode and the Schottky diode being coupled between the first and the second electrically conductive electrodes in anti-series configuration.