Package structure

A package structure, comprising:

• a redistribution circuit structure;
• a semiconductor die, disposed over and electrically coupled to the redistribution circuit structure;
• at least one first through via, next to the semiconductor die and electrically coupled to the redistribution circuit structure;
• a first insulating encapsulation, encapsulating the semiconductor die and the at least one first through via, the at least one first through via penetrating through the first insulating encapsulation;
• a plurality of first antennas, disposed over the first insulating encapsulation and electrically coupled to the semiconductor die;
• at least one second through via, next to the plurality of first antennas and electrically coupled to the redistribution circuit structure;
• a second insulating encapsulation, encapsulating the plurality of first antennas and the at least one second through via, the plurality of first antennas and the at least one second through via penetrating through the second insulating encapsulation;
• a plurality of second antennas, disposed over the second insulating encapsulation and electrically coupled to the semiconductor die;
• a third insulating encapsulation, encapsulating the plurality of second antennas, the plurality of second antennas penetrating through the third insulating encapsulation;
• and
• a plurality of conductive terminals, disposed over the redistribution circuit structure and electrically coupled to the redistribution circuit structure, the redistribution circuit structure being between the first insulating encapsulation and the plurality of conductive terminals.

A package structure, comprising:

• a redistribution structure;
• a first semiconductor die, located on and electrically connected to the redistribution structure;
• a through via, located on and electrically connected to the redistribution structure and next to the first semiconductor die;
• a first insulating encapsulation, encapsulating the first semiconductor die and the through via;
• first antennas and second antennas, aside of and electrically connected to the first semiconductor die and encapsulated in the first insulating encapsulation, wherein propagating directions of electromagnetic waves generated by the first antennas and the second antennas are different;
• a second insulating encapsulation, located on the first insulating encapsulation, where the first insulating encapsulation is located between the redistribution structure and the second insulating encapsulation;
• and
• third antennas and fourth antennas, located on and electrically connected to the first semiconductor die and encapsulated in the second insulating encapsulation, wherein propagating directions of electromagnetic waves generated by the third antennas and the fourth antennas are different.