Nitride semiconductor light-emitting element
AssigneeNikkiso Co., Ltd.
InventorsYusuke Matsukura, Cyril Pernot
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Abstract
A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.
Claims10
A nitride semiconductor light-emitting element that outputs ultraviolet light, the nitride semiconductor light-emitting element comprising:
- an active layer comprising a quantum well structure that generates the ultraviolet light;
- a dislocation suppression structure-containing layer being formed on the active layer and comprising a dislocation suppression structure that stops or bends a dislocation from the active layer;
- and
- a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm;
- wherein the dislocation suppression structure comprises a silicon-containing compound.
Dependencies are inferred from the claim text.