Light-emitting diode structure and manufacturing method thereof
AssigneePlayNitride Display Co., Ltd.
InventorsBo-Wei Wu, Yu-Yun Lo, Shiang-Ning Yang, Chang-Feng Tsai
Life of this patent
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Abstract
A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.
Claims12
A manufacturing method of a light-emitting diode structure, the method comprising:
- growing a semiconductor stack layer on a first substrate, wherein the semiconductor stack layer is divided into a first portion and a second portion, and comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially grown on the first substrate;
- providing a force applying means to physically break the first portion and the second portion apart from each other, wherein the first portion comprises a plurality of light-emitting diode structures separated from each other;
- and
- before providing the force applying means to break the first portion and the second portion apart from each other, irradiating, by a laser, a boundary between the first portion and the first substrate or a boundary between the second portion and the first substrate to reduce a binding force between the first portion and the first substrate or reduce a binding force between the second portion and the first substrate.
Dependencies are inferred from the claim text.