Light emitting device

A light-emitting device comprising:

• an n-side semiconductor layer comprising an n-type contact layer, and an intermediate layer located on the n-type contact layer;
• an active layer located on the intermediate layer;
• a p-side semiconductor layer located on the active layer;
• and
• an n-side electrode contacting the n-type contact layer, wherein:
• the intermediate layer comprises at least one stacked portion comprising a first layer and a second layer,
• the first layer is an n-type nitride semiconductor layer comprising an n-type impurity, Al, and Ga,
• the second layer is a nitride semiconductor layer that comprises Al and Ga, and has a larger thickness than the first layer,
• an n-type impurity concentration of the first layer is lower than an n-type impurity concentration of the n-type contact layer,
• an n-type impurity concentration of the second layer is lower than the n-type impurity concentration of the first layer, and
• an Al composition ratio of the first layer is higher than an Al composition ratio of the second layer.