Optical receiving element and manufacturing method therefor

A method for producing a light receiving element, the method comprising:

• forming a first n-type contact layer composed of a first n-type semiconductor on a substrate;
• forming, on another substrate, a p-type contact layer composed of a p-type semiconductor, a light absorbing layer composed of a first semiconductor, and a semiconductor layer composed of a second n-type semiconductor in this order;
• patterning the semiconductor layer to a predetermined area in a plan view to form a second n-type contact layer;
• bonding the substrate and the other substrate such that a side on which the first n-type contact layer is formed and a side on which the second n-type contact layer faces each other;
• removing the other substrate after the substrate and the other substrate are bonded to each other to layer the first n-type contact layer, the second n-type contact layer, the light absorbing layer, and the p-type contact layer in this order on the substrate;
• patterning the light absorbing layer and the p-type contact layer to make an area of each of the light absorbing layer and the p-type contact layer larger than the area of the second n-type contact layer in the plan view such that the second n-type contact layer is disposed inside the light absorbing layer in the plan view;
• forming a first electrode on the p-type contact layer;
• forming a second electrode on the first n-type contact layer around a region where the second n-type contact layer is formed;
• and
• forming a reflection layer on the p-type contact layer, the reflection layer having an area smaller than an area of the p-type contact layer in the plan view and being disposed inside the p-type contact layer in the plan view, wherein the first electrode is disposed on the p-type contact layer around the reflection layer.

A method for forming a light receiving element, the method comprising:

• forming a first n-type contact layer comprising a first n-type semiconductor on a first substrate;
• forming, on a second substrate, a p-type contact layer comprising of a p-type semiconductor, a light absorbing layer comprising of a first semiconductor, and a semiconductor layer comprising of a second n-type semiconductor in this order;
• patterning the semiconductor layer to have a first area in a plan view to form a second n-type contact layer;
• bonding the first substrate and the second substrate such that a side on which the first n-type contact layer is formed and a side on which the second n-type contact layer faces each other;
• removing the second substrate after bonding the first substrate to the second substrate;
• patterning the light absorbing layer and the p-type contact layer to make a second area of the light absorbing layer and a third area of the p-type contact layer larger than the first area of the second n-type contact layer in the plan view such that the second n-type contact layer overlaps the light absorbing layer in the plan view;
• and
• forming a reflection layer on the p-type contact layer, the reflection layer having a fourth area smaller than the third area of the p-type contact layer in the plan view and overlapping the p-type contact layer in the plan view.