Solar cell, method for producing same and solar cell module

A solar cell module, comprising:

• at least one solar cell string each formed by connecting a plurality of the solar cells;
• a packaging film configured to cover a surface of each of the at least one solar cell string;
• and
• a cover plate configured to cover a surface of the packaging film away from the at least one solar cell string;
• wherein at least one solar cell of the plurality of the solar cells includes:
• a substrate having a front surface and a rear surface opposite to the front surface;
• a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface;
• wherein the first passivation layer includes a dielectric material;
• the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1;
• the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6;
• and
• a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
• wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5;
• and
• wherein the ratios y/x, n/m and j/i are atomic ratios;
• wherein the solar cell further comprises a fourth passivation layer formed on a side of the doped conductive layer facing away from the substrate, the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8;
• and
• wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer.

A method for producing a solar cell, comprising:

• providing a substrate having a front surface and a rear surface opposite to the front surface;
• forming a first passivation layer, a second passivation layer and a third passivation layer sequentially on the front surface and in a direction away from the front surface;
• wherein the first passivation layer includes a dielectric material;
• the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1;
• the third passivation layer includes a silicon oxynitride SiONiNj material, and a ratio of j/i is 0.1˜0.6;
• forming a tunneling oxide layer and a doped conductive layer sequentially on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
• and
• forming a fourth passivation layer on a side of the doped conductive layer facing away from the substrate, wherein the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8, and wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer;
• wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5;
• and
• wherein the ratios y/x, n/m and j/i are atomic ratios.