Photodiode and method for operating a photodiode

A method for operating a photodiode, wherein the photodiode comprises a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area for absorbing radiation to be detected and thereby to generate charge carriers, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode for receiving a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area and the gate region from the radiation to be detected, the method comprising:

• applying a reverse bias voltage between the first electrode and the second electrode,
• applying a gate voltage to the gate electrode;
• balancing a depletion at the first doped area by generated charge carriers from the second doped area;
• and
• enabling the balancing of the depletion by the current flow between the base electrode and the first electrode.

A photodiode comprising:

• a semiconductor body having a light entrance side and a back side opposite the light entrance side;
• a first electrode at the light entrance side atop a first doped area of a first conductivity type;
• a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation to be detected and thereby to generate charge carriers;
• a third electrode atop a third doped area of the second conductivity type;
• a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode,
• a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area;
• and
• a radiation shield covering and shielding the first doped area from the radiation to be detected,
• wherein the radiation shield completely covers the first doped area as well as the gate region,
• wherein the second doped area is distant from the radiation shield, seen in a top view onto the light entrance side,
• wherein the first electrode is located between the second electrode, and
• wherein the third electrode and a junction between the first electrode and the third electrode to be forward biased.