Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks

A method comprising:

• providing a group IV substrate and a group III-V chiplet, said group IV substrate including a group IV device;
• bonding said group III-V chiplet to said group IV substrate;
• patterning said group III-V chiplet to produce a patterned group III-V device;
• forming a blanket dielectric layer over said patterned group III-V device;
• forming a first contact hole and a second contact hole in said blanket dielectric layer, said first contact hole over said patterned group III-V device, said second contact hole over said group IV device;
• forming a liner stack in said first contact hole and said second contact hole substantially concurrently and directly contacting both a group III-V portion of said patterned group III-V device and said group IV device;
• and
• depositing a filler metal in said first contact hole and said second contact hole over said liner stack.