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AssigneeMicron Technology, Inc.
InventorsManzar Siddik, Terry H. Kim
Estimating the term…
Some embodiments include a memory cell having charge-trapping-material between a semiconductor channel material and a gating region. The charge-trapping-material includes silicon, nitrogen and trap-enhancing-additive. The trap-enhancing-additive includes one or more of carbon, phosphorus, boron and metal. Some embodiments include an integrated assembly having a stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the stack. Charge-trapping-regions are along the channel-material-pillars and are between the channel-material-pillars and the conductive structures. The charge-trapping-regions include a charge-trapping-material which contains silicon, nitrogen and trap-enhancing-additive. The trap-enhancing-additive includes one or more of carbon, phosphorus, boron and metal.
A memory cell comprising a charge-trapping-region between a semiconductor channel material and a gating region, the charge-trapping-region comprising at least three charge-trapping-materials, at least two of the at least three charge-trapping-materials comprise different charge-trapping-materials;
An integrated assembly, comprising:
An integrated assembly, comprising:
Dependencies are inferred from the claim text.