Integrated nanosheet field effect transistors and floating gate memory cells

A method of fabricating a semiconductor device, the method comprising:

• forming a nanosheet stack and fin structures;
• forming tunneling oxide and floating gate layers over the nanosheet stack and fin structures;
• forming dummy gate structures over the nanosheet stack and fin structures;
• exposing the floating gate;
• forming a blocking oxide layer over the floating gate;
• and
• forming replacement metal gates.

A method of fabricating a semiconductor device comprising a field effect transistor (FET) and a floating gate memory cell, the method comprising:

• forming a nanosheet stack for the FET;
• forming at least one fin structure for the floating gate memory;
• forming tunneling oxide and floating gate layers over the fin structure;
• forming dummy gate structures over the nanosheet stack and fin structures;
• exposing the floating gate layer of the floating gate memory;
• forming a blocking oxide layer over the floating gate;
• and
• forming a replacement metal gate adjacent to the blocking oxide layer.