US 12,009,432 B2Granted

Transistor and display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsHitoshi Kunitake, Yasuhiro Jinbo, Naoki Okuno, Masahiro Takahashi, Tomonori Nakayama

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Abstract

A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

Claims9

Dependent claims

A display device comprising:

a first to a fourth wiring;
a light-emitting element;
a first capacitor;
a second capacitor;
and
a first to a fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one electrode of the first capacitor,
wherein a gate of the first transistor is electrically connected to the second wiring,
wherein one of a source and a drain of the second transistor is electrically connected to an anode of the light-emitting element,
wherein the other of the source and the drain of the second transistor is electrically connected to the third wiring,
wherein a gate of the second transistor is electrically connected to the one electrode of the first capacitor,
wherein one of a source and a drain of the third transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the anode of the light-emitting element,
wherein one of a source and a drain of the fourth transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the one electrode of the first capacitor,
wherein the other electrode of the first capacitor is electrically connected to the anode of the light-emitting element,
wherein one electrode of the second capacitor is electrically connected to the one electrode of the first capacitor,
wherein the other electrode of the second capacitor is electrically connected to the third wiring,
wherein the first transistor comprises a metal oxide in a channel formation region, and
wherein Vsh in the first transistor is greater than or equal to −0.3 V.

18 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/679,413Filed 24 Feb 2022
Priority: JP 2021-0355255 Mar 2021
Published: US 2022/0285560 A18 Sep 2022
Granted: 11 Jun 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 30/6758
Thin-film transistors [TFT]: characterised by the insulating substrates
G09G 3/32
Using electroluminescent panels: semiconductive, e.g. using light-emitting diodes [LED]
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Family

US 2022/0285560 A1Pre-grant publication · published 8 Sep 2022
US 12,009,432 B2This patent

From the US filing history. Foreign family members aren’t listed.

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