Structure and method for FinFET device with asymmetric contact

A semiconductor structure, comprising:

• an active region on a semiconductor substrate;
• a gate stack disposed on the active region;
• a gate dielectric cap overlying the gate stack;
• a gate spacer of a first dielectric material disposed on sidewalls of the gate stack;
• a contact feature landing on the active region;
• and
• a dielectric layer of a second dielectric material disposed on a sidewall of the contact feature, wherein the dielectric layer is enclosing the contact feature in a top view.

A semiconductor structure, comprising:

• an active region on a semiconductor substrate;
• a gate stack disposed on the active region;
• a gate dielectric cap overlying the gate stack;
• a gate spacer of a first dielectric material disposed on sidewalls of the gate stack;
• a contact feature landing on the active region;
• and
• a dielectric layer of a second dielectric material disposed between the gate spacer and contact feature, wherein the dielectric layer has a loop structure enclosing the contact feature in a top view.