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US 12,009,424 B2Granted
Semiconductor device, and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorJhen-Yu Tsai
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a first surface and a second surface protruding from the first surface of the substrate; a gate oxide layer disposed on the second surface of the substrate; and a first spacer disposed on the first surface of the substrate, and contacting the substrate and the gate oxide layer.
Claims16
A semiconductor device, comprising:
- a substrate having a first surface and a second surface protruding from the first surface of the substrate;
- a gate oxide layer disposed on the second surface of the substrate;
- a first spacer disposed on the first surface of the substrate, and contacting the substrate and the gate oxide layer;
- a second spacer contacting the first spacer;
- and
- a lightly doped region partially exposed from the first surface of the substrate and contacting the first spacer and the second spacer.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a substrate having a first surface and a second surface protruding from the first surface of the substrate;
- forming a gate oxide layer on the second surface of the substrate;
- forming a first spacer on the first surface of the substrate, and contacting the substrate and the gate oxide layer;
- forming a second spacer contacting the first spacer;
- and
- forming a lightly doped region partially exposed from the first surface of the substrate and contacting the first spacer and the second spacer.
3 more elements
Dependencies are inferred from the claim text.