Core-shell nanofin vertical switch and high-voltage switching

A process for high-voltage switching with a core-shell nanofin vertical switch, the process comprising:

• receiving, by a drain contact of a core-shell nanofin vertical switch, a drain voltage, the core-shell nanofin vertical switch comprising:
• an n-type GaN nanofin core comprising:
• an n-type drift layer arranged at a drain terminus of the n-type GaN nanofin core and comprising GaN;
• an n-type channel disposed on the n-type drift layer and comprising GaN;
• and
• an n-type source disposed on the n-type drift layer, arranged at a source terminus, and comprising GaN, such that the n-type channel is interposed between the n-type source and the n-type drift layer;
• a p-type nanofin shell disposed on the n-type GaN nanofin core, surrounding the n-type GaN nanofin core at an interface surface of the n-type GaN nanofin core, and comprising GaN;
• an optional source contact disposed on the n-type GaN nanofin core and the p-type nanofin shell and in electrical communication with the n-type source, such that the n-type source is interposed between the source contact and the n-type channel;
• a gate contact disposed on the p-type nanofin shell and in electrical communication with the p-type nanofin shell, such that the p-type nanofin shell is interposed between the gate contact and the n-type channel, and the gate contact is interposed between the source contact and the drain contact;
• and
• the drain contact disposed on the n-type drift layer, such that the drain contact is in electrical communication via ohmic contact with the n-type drift layer;
• turning on the core-shell nanofin vertical switch by:
• receiving, by the gate contact, a gate voltage that is positive with respect to a ground potential;
• accumulating electron charge carriers in the n-type GaN nanofin core in response to receiving the gate voltage;
• flowing electrical current between the source contact and the drain contact in response to accumulating electron charge carriers;
• and
• turning off the core-shell nanofin vertical switch by:
• receiving, by the gate contact, the gate voltage that is at ground potential or negative with respect to a ground potential;
• depleting the electron charge carriers from the n-type GaN nanofin core in response to receiving the gate voltage at ground potential or negative with respect to a ground potential;
• and
• terminating flow of electrical current between the source contact and the drain contact in response to depleting the electron charge carriers.