High electron mobility transistors having improved performance
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsKyle Bothe, Joshua Bisges
Life of this patent
Estimating the term…
Abstract
A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.
Claims29
A power amplifier comprising a gallium nitride (GaN)-based high electron mobility transistor (HEMT) device, wherein the power amplifier is configured to generate a power density greater than 4.6 W/mm with a peak power added efficiency (PAE) of greater than 33% while operating at 30 GHz,
- wherein the HEMT device comprises:
- a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate;
- a drain contact and a source contact on the barrier layer;
- and
- a gate contact on the barrier layer between the drain contact and the source contact,
- wherein a sheet resistance of a drain access region of the semiconductor structure between the gate contact and the drain contact is between 300 and 400 Ω/sq.
A gallium nitride (GaN)-based high electron mobility transistor (HEMT) device comprising:
- a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate;
- a drain contact and a source contact on the barrier layer;
- and
- a gate contact on the barrier layer between the drain contact and the source contact,
- wherein a sheet resistance of a drain access region of the semiconductor structure between the gate contact and the drain contact and/or a source access region of the semiconductor structure between the gate contact and the source contact is between 300 and 400 Ω/sq.
A gallium nitride (GaN)-based high electron mobility transistor (HEMT) device comprising:
- a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate;
- a drain contact and a source contact on the barrier layer;
- a gate contact on the barrier layer between the drain contact and the source contact;
- and
- a first insulating layer on the barrier layer between the drain contact and the gate contact,
- wherein an interface between the first insulating layer and the barrier layer comprises a modified interface region that is laterally offset from a bottom surface of the gate contact, and
- wherein an area between the modified interface region and the gate contact comprises an interface modification that is different from the modified interface region.
Dependencies are inferred from the claim text.