Heterojunction electronic component comprising a field plate and a p-doped floating region
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorFlorian Rigaud-Minet
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Abstract
A heterojunction electronic component includes a substrate; a heterojunction including a channel layer arranged on the substrate and a barrier layer arranged on the channel layer; a passivation layer arranged on the barrier layer; a field plate separated from the barrier layer by a portion of the passivation layer; and a floating region made from a p-doped semiconductor material, located in the barrier layer in vertical alignment with a flank of the field plate, the floating region having a thickness less than that of the barrier layer.
Claims11
A heterojunction electronic component comprising:
- a substrate;
- a heterojunction comprising a channel layer arranged on the substrate and a barrier layer arranged on the channel layer, the barrier layer having a top surface and a recess arranged in said top surface;
- a passivation layer arranged on the top surface of the barrier layer;
- a field plate separated from the barrier layer by a portion of the passivation layer,
- the recess in the barrier layer being in vertical alignment with a flank of the field plate, and
- a floating region made from a p-doped semiconductor material, located in the recess of the barrier layer, and having a total thickness that extends up to the top surface of the barrier layer, the floating region being in the vertical alignment with the flank of the field plate, the total thickness of the floating region being less than that of the barrier layer.
Dependencies are inferred from the claim text.