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US 12,009,412 B2Granted
Bipolar transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsShesh Mani Pandey, Judson R. Holt, Vibhor Jain
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor on insulator material; an emitter region above the base region; and a collector region under the base region and within a cavity of a buried insulator layer.
Claims20
A structure comprising:
- a base region comprising a semiconductor on insulator material;
- an emitter region above the base region and surrounded by an insulator material above the semiconductor on insulator material;
- and
- a collector region of semiconductor material under the base region and within a cavity of a buried insulator layer,
- wherein a bottom surface of the collector region is facing a portion of the buried insulator layer below the collector region and portions of the collector region extend upward into the insulator material and above a bottom surface of the emitter region.
2 more elements
A structure comprising:
- a semiconductor on insulator substrate comprising a semiconductor handle substrate, a buried insulator material above the semiconductor handle substrate and a semiconductor layer above the buried insulator material;
- a base region comprising the semiconductor layer and bounded by shallow trench isolation structures;
- an emitter region vertically above the base region and bounded by an insulator material above the buried insulator material;
- and
- a collector region of semiconductor material vertically below the base region and surrounded from above, below and sides by the buried insulator material and further extending into the insulation material on sides-of the base region and above a bottom surface the emitter region.
2 more elements
A method comprising:
- forming a base region comprising a semiconductor on insulator material;
- forming an emitter region above the base region and surrounded by an insulator material above the semiconductor on insulator material;
- and
- forming a collector region of semiconductor material under the base region and within a cavity of a buried insulator layer, wherein a bottom surface of the collector region is facing a portion of the buried insulator layer below the collector region and portions of the collector region extend upward into the insulator material and above a bottom surface of the emitter region.
1 more element
Dependencies are inferred from the claim text.