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US 12,009,410 B2Granted
Semiconductor device and method fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Chang Lin, Wei-Hao Wu, Jia-Ni Yu
Life of this patent
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Abstract
A semiconductor device includes an active fin disposed on a substrate, a gate structure, and a pair of gate spacers disposed on sidewalls of the gate structure, in which the gate structure and the gate spacers extend across a first portion of the active fin, and a bottom surface of the gate structure is higher than a bottom surface of the gate spacers.
Claims20
A semiconductor device, comprising:
- a substrate;
- a semiconductor fin extending along a first direction on the substrate;
- a dielectric fin disposed on the substrate and extending substantially parallel to the semiconductor fin;
- a gate structure across the semiconductor fin and the dielectric fin;
- and
- gate spacers disposed on opposite sidewalls of the gate structure, wherein an interface between the gate structure and the dielectric fin is lower than an interface between the dielectric fin and one of the gate spacers.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a semiconductor fin protruding from the substrate and extending along a first direction;
- a first dielectric fin extending along the first direction, wherein the first dielectric fin has a bottom surface higher than a bottom of the semiconductor fin;
- and
- a gate structure across the semiconductor fin and the first dielectric fin.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a plurality of semiconductor fins formed on the substrate and extending along a first direction;
- an isolation fin over the substrate and extending along the first direction;
- a plurality of hard masks respectively on the plurality of semiconductor fins, wherein the plurality of hard masks are formed as a same material as the isolation fin;
- and
- a gate structure extending across the plurality of hard masks and the plurality of semiconductor fins.
3 more elements
Dependencies are inferred from the claim text.