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US 12,009,409 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.
Claims4
A semiconductor device, comprising:
- a fin-shaped structure extending along a first direction on a substrate;
- a gate electrode extending along a second direction on the fin-shaped structure, wherein the gate electrode comprises:
- a high-k dielectric layer;
- a work function metal layer;
- and
- a low resistance metal layer;
- a spacer extending along the second direction adjacent to the gate electrode;
- and
- an epitaxial layer adjacent to two sides of the gate electrode and the spacer, wherein the epitaxial layer comprises a hexagon under a top view perspective and a protruding portion between the hexagon and the gate electrode and directly under the spacer and the hexagon and the protruding portion are consisted of semiconductor material.
6 more elements
Dependencies are inferred from the claim text.