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US 12,009,406 B2Granted
FinFET device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
Life of this patent
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Abstract
A semiconductor device includes a fin extending from a substrate, a gate stack over and along a sidewall of the fin, a spacer along a first sidewall of the gate stack and the sidewall of the fin, a dummy gate material along the sidewall of the fin, wherein the dummy gate material is between the spacer and the gate stack, and a first epitaxial source/drain region in the fin and adjacent the gate stack.
Claims20
A semiconductor device, comprising:
- a fin extending from a substrate;
- a gate stack over a top and along a sidewall of the fin;
- a spacer along a first sidewall of the gate stack and the sidewall of the fin;
- a dummy gate material along the sidewall of the fin, wherein the dummy gate material and the spacer are different layers, wherein the dummy gate material is between the spacer and the gate stack;
- and
- a first epitaxial source/drain region in the fin and adjacent the gate stack.
3 more elements
A semiconductor device, comprising:
- a fin extending from a substrate;
- an isolation region along a sidewall of the fin, the fin protruding above the isolation region;
- a gate structure over the fin and an upper surface of the isolation region, the gate structure extending along a sidewall of the fin;
- a spacer along a first sidewall of the gate structure, the spacer contacting the gate structure;
- a corner feature along the sidewall of the fin, wherein the corner feature is a different layer than the spacer, wherein the corner feature is between the spacer and the gate structure along a sidewall of the fin;
- and
- a source/drain region in the fin and adjacent the gate structure.
4 more elements
A semiconductor device, comprising:
- a fin extending from a substrate;
- an isolation region along a sidewall of the fin, the fin extending higher than an upper surface of the isolation region;
- a gate structure over the fin and an upper surface of the isolation region, the gate structure comprising a gate dielectric layer and a gate electrode;
- a spacer structure contacting a first sidewall of the gate structure;
- a corner feature along the sidewall of the fin, wherein the corner feature is a separate element from the spacer structure, wherein the corner feature separates the gate structure from the spacer structure at a sidewall of the fin, wherein a width of the gate structure widens as the gate structure extends away from the sidewall of the fin;
- and
- an epitaxial source/drain region adjacent the gate structure.
4 more elements
Dependencies are inferred from the claim text.