Semiconductor structure with metal cap layer and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Liang Cheng, Ziwei Fang
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Abstract
Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a fin protruding from a substrate and a gate stack formed across the fin. The semiconductor structure further includes a source/drain structure attaching to the gate stack and a contact structure connecting to the source/drain structure. The semiconductor structure further includes a first cap layer covering a top surface of the contact structure. In addition, the first cap layer includes a first halogen.
Claims20
A semiconductor structure, comprising:
- a fin protruding from a substrate;
- a gate stack formed across the fin;
- a source/drain structure attaching to the gate stack;
- a contact structure connecting to the source/drain structure;
- and
- a first cap layer covering a top surface of the contact structure, wherein the first cap layer comprises a first halogen.
A method for forming a semiconductor structure, comprising:
- patterning a substrate to form a fin;
- forming a source/drain structure attaching to the fin;
- forming a contact structure over the source/drain structure;
- and
- introducing a first halogen-containing precursor on a top surface of the contact structure to form a first cap layer.
A method for forming a semiconductor structure, comprising:
- forming a fin protruding from a substrate;
- forming a source/drain structure over the fin;
- forming a gate stack over the fin;
- recessing the gate stack to form a first recess;
- forming a first halogen-containing cap layer at a bottom portion of the first recess;
- and
- forming a first mask layer in the first recess.
Dependencies are inferred from the claim text.