Semiconductor device suppressing rounded shapes of source/drain contact layers

A semiconductor device, comprising:

• a first fin structure and a second fin structure isolated from the first fin structure by an isolation insulating layer, the first and second fin structures extending in a first direction;
• a first gate electrode and a second gate electrode, the first and second gate electrodes disposed over the first fin and second fin structures and extending in a second direction crossing the first direction;
• a first source/drain contact layer disposed over and in electrically contact with the first and second fin structures, and between the first gate electrode and second gate electrode;
• and
• a separation insulating layer disposed adjacent to the first source/drain contact layer, wherein:
• the first source/drain contact layer is in contact with a first side face of the separation insulating layer, and
• the separation insulating layer is made of silicon nitride.

A semiconductor device, comprising:

• a first fin structure and a second fin structure;
• a first gate structure and a second gate structure, both formed over the first fin structure;
• a first source/drain contact layer disposed between the first gate structure and the second gate structure;
• a third gate structure and a fourth gate structure, both formed over the second fin structure;
• a second source/drain contact layer disposed between the third gate structure and the fourth gate structure;
• a separation insulating layer separating the first source/drain contact layer from the second source/drain contact layer, wherein:
• the first and second source/drain contact layers include at least one of W, Co, Ni, Ti, and Ta, a silicide thereof and a nitride thereof,
• an end of the first gate structure, an end of the second gate structure and an end of the first source drain contact layer are in contact with a first side face of the separation insulating layer, and
• an end of the third gate structure, an end of the fourth gate structure and an end of the second source drain contact layer are in contact with a second side face of the separation insulating layer opposite to the first side face.