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US 12,009,397 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsDeok Han Bae, Ju Hun Park, Myung Yoon Um
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided.
Claims20
A semiconductor device comprising:
- a substrate including a first region and a second region, the second region being adjacent to the first region in a first horizontal direction;
- a first active pattern extending in a second horizontal direction on the first region, the second horizontal direction being different from the first horizontal direction;
- a second active pattern extending in the second horizontal direction on the second region, the second active pattern being spaced apart from the first active pattern in the first horizontal direction;
- a field insulating layer surrounding at least a part of side walls of each of the first and second active patterns on the substrate, the field insulating layer including a protrusion protruding upwardly in a vertical direction on a boundary line between the first region and the second region;
- a gate electrode extending in the first horizontal direction on the first and second active patterns;
- a first source/drain region on at least one side of the gate electrode on the first active pattern;
- a second source/drain region on at least one side of the gate electrode on the second active pattern;
- and
- a source/drain contact electrically connecting the first source/drain region and the second source/drain region with each other, the source/drain contact including a first portion and a second portion, the first portion extending toward the field insulating layer between the first source/drain region and the second source/drain region, the second portion on the first portion,
- wherein a lower surface of the first portion of the source/drain contact includes a recess which is recessed upwardly in the vertical direction, and
- at least a part of the protrusion is inside the recess.
8 more elements
A semiconductor device comprising:
- a substrate;
- a first active region extending in a first horizontal direction on the substrate;
- a second active region extending in the first horizontal direction on the substrate, the second active region spaced apart from the first active region in a second horizontal direction, the second horizontal direction being different from the first horizontal direction;
- an element isolation region between the first active region and the second active region;
- a field insulating layer being on the element isolation region and surrounding at least a part of side walls of the first and second active regions, the field insulating layer including a protrusion protruding upwardly in a vertical direction;
- a first source/drain region on the first active region;
- a second source/drain region on the second active region;
- a source/drain contact electrically connecting the first source/drain region and the second source/drain region with each other, the source/drain contact including a first portion and a second portion, the first portion extending toward the field insulating layer on the element isolation region, the second portion on the first portion;
- an interlayer insulating layer surrounding the first source/drain region and the source/drain contact on the field insulating layer;
- and
- an etching stop layer being between the field insulating layer and the interlayer insulating layer, and being between the first source/drain region and the interlayer insulating layer,
- wherein at least a part of the protrusion extends into the first portion of the source/drain contact.
9 more elements
A semiconductor device comprising:
- a substrate including an NMOS region and a PMOS region, the PMOS region adjacent to the NMOS region in a first horizontal direction;
- a first active pattern extending in a second horizontal direction on the NMOS region, the second horizontal direction being different from the first horizontal direction;
- a second active pattern extending in the second horizontal direction on the PMOS region, the second active pattern being spaced apart from the first active pattern in the first horizontal direction;
- a field insulating layer surrounding at least a part of side walls of each of the first and second active patterns on the substrate, the field insulating layer including a protrusion protruding upwardly in a vertical direction on a boundary line between the NMOS region and the PMOS region;
- a gate electrode extending in the first horizontal direction on the first and second active patterns;
- a first source/drain region on at least one side of the gate electrode on the first active pattern;
- a second source/drain region on at least one side of the gate electrode on the second active pattern;
- a source/drain contact electrically connecting the first source/drain region and second source/drain region with each other, the source/drain contact including a first portion and a second portion, the first portion extending toward the field insulating layer between the first source/drain region and the second source/drain region, the second portion on the first portion;
- an interlayer insulating layer surrounding the first source/drain region and the source/drain contact on the field insulating layer;
- and
- an etching stop layer being between the field insulating layer and the interlayer insulating layer, and being between the first source/drain region and the interlayer insulating layer,
- wherein an upper end of the protrusion is lower than an upper surface of the first active pattern that is in contact with the first source/drain region,
- a lower surface of the first portion of the source/drain contact includes a recess that is recessed upwardly in the vertical direction, and
- at least a part of the protrusion is in contact with the first portion of the source/drain contact inside the recess.
11 more elements
Dependencies are inferred from the claim text.