Back to results
US 12,009,388 B2Granted
Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc China Company Limited
InventorZheng-Long Chen
Life of this patent
Estimating the term…
Abstract
A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.
Claims20
A method, comprising:
- forming a dielectric layer on a substrate;
- and
- forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first quadrilateral spiral path, the second spiral electrode extending in a second quadrilateral spiral path, and the spiral common electrode extending in a third quadrilateral spiral path laterally between the first and second quadrilateral spiral paths, wherein from a top view, a straight section of the first spiral electrode connecting to a spiral center of the first spiral electrode is in parallel with a straight section of the second spiral electrode connecting to a spiral center of the second spiral electrode, and the straight section of the second spiral electrode connecting to the spiral center of the second spiral electrode is in parallel with a straight section of the spiral common electrode connecting to a spiral center of the spiral common electrode.
A method, comprising:
- forming a first spiral electrode over a substrate;
- and
- forming a second spiral electrode over the first spiral electrode, the second spiral electrode spaced apart from the first spiral electrode and overlapping the first spiral electrode, wherein a first turn of the first spiral electrode connecting to a spiral center of the first spiral electrode is free of a via thereon, and a first turn of the second spiral electrode connecting to a spiral center of the second spiral electrode is free of a via thereon.
A capacitor, comprising:
- a first spiral electrode;
- a second spiral electrode in a same level height as the first spiral electrode, the second spiral electrode being concentric with the first spiral electrode, the second spiral electrode is spaced apart from the first spiral electrode;
- a first common electrode laterally between the first and second spiral electrodes;
- a third spiral electrode in a different level height than the first and second spiral electrodes;
- and
- a second common electrode in a same level height as the third spiral electrode.
3 more elements
Dependencies are inferred from the claim text.