Structure and method for forming integrated high density MIM capacitor

A device comprising:

• an embedded device;
• an interconnect structure disposed over the embedded device;
• a first passivation structure disposed over the interconnect structure, the first passivation structure comprising
• an integrated device layer, the integrated device layer comprising a first capacitor plate and a first dummy metal plate, the first capacitor plate having a bottommost surface and a topmost surface, the first dummy metal plate having a bottommost surface that is level with the bottommost surface of the first capacitor plate and having a topmost surface that is level with the topmost surface of the first capacitor plate, and
• a second integrated device layer, the second integrated device layer comprising a second capacitor plate and a second dummy metal plate, the second capacitor plate having a bottommost surface that is above the topmost surface of the first capacitor plate and having a topmost surface, the second dummy metal plate having a bottommost surface that is level with the bottommost surface of the second capacitor plate and having a topmost surface that is level with the topmost surface of the second capacitor plate;
• a second passivation structure disposed over the first passivation structure, the second passivation structure having bond pads disposed at an upper surface thereof;
• a first connector coupled to the interconnect structure and to the first capacitor;
• and
• a second connector coupled to the interconnect structure, the second connector passing through the first and second integrated device layers and located away from the first capacitor and the first dummy metal plate.

A structure comprising:

• first insulating layer disposed over a semiconductor substrate;
• a series of conductive layers separated by a series of dielectric layers disposed over the first insulating layer, the series of conductive layers including a first level and a second level, the first level including first capacitor electrodes and first dummy metal plates, the second level including second capacitor electrodes and second dummy metal plates, the first dummy metal plates interspersed among the first capacitor electrodes;
• a second insulating layer disposed over the series of conductive layers and dielectric layers;
• a first set of contact plugs extending through the series of conductive layers and the series of dielectric layers, each of the first set of contact plugs contacting first electrodes or second electrodes of the series of conductive layers;
• and
• a second set of contact plugs extending through the second insulating layer, the series of conductive layers, the series of dielectric layers, and the first insulating layer, a keep out zone surrounding each contact plug of the second set of contact plugs, the keep out zone free from the first capacitor electrodes, the second electrodes, the first dummy metal plates, and the second dummy metal plates.