Pixel of a semiconductor image sensor and method of manufacturing a pixel
Assigneeams Sensors Belgium BVBA
InventorsGuy Meynants, Gerhard Eilmsteiner
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Abstract
A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.
Claims19
A pixel comprising:
- a semiconductor body having a first surface configured as an entrance surface and a light-capturing region configured for capturing light incident on the first surface;
- a structured interface;
- isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface;
- and
- a filter element arranged at a distance from the first surface such that light incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element, wherein the filter element is configured
- to reflect light if the angle of incidence is larger than the critical angle;
- and
- to transmit light if the angle of incidence is less than or equal to the critical angle.
A method of manufacturing a pixel, the method comprising:
- providing a semiconductor body having a first surface that is configured as an entrance surface, and a light-capturing region that is configured for capturing light incident on the first surface;
- forming a structured interface;
- applying isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface;
- and
- arranging a filter element at a distance from the first surface such that light incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element, wherein the filter element is configured
- to reflect light if the angle of incidence is larger than the critical angle;
- and
- to transmit light if the angle of incidence is less than or equal to the critical angle.
A pixel comprising:
- a semiconductor body having a first surface configured as an entrance surface and a light-capturing region configured for capturing light incident on the first surface;
- a structured interface formed by a light scattering layer on a surface of the semiconductor body;
- isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface;
- and
- a filter element arranged at a distance from the first surface such that light incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.
Dependencies are inferred from the claim text.