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US 12,009,372 B2Granted
Display device including hydrogen diffusion barrier film, and method for manufacturing same
AssigneeIsac Research Inc.
InventorsJin-Seong Park, Seong-Hyeon Lee, Ju-Hwan Han, Hyun-Jun Jeong
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Abstract
A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.
Claims11
A display device comprising:
- a substrate including a driving area and a pixel area;
- a first transistor on the driving area;
- a second transistor on the pixel area;
- a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor;
- and
- a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor,
- wherein the first transistor comprises a first gate electrode, a first source electrode and a first drain electrode disposed on the first gate insulating film, and the display device further comprises:
- a first insulating film disposed on the driving area including the first gate electrode, the first source electrode, and the first drain electrode;
- and
- a third hydrogen diffusion barrier film disposed between the first gate electrode, the first source electrode, the first drain electrode and the first insulating film.
7 more elements
A method for manufacturing a display device, the method comprising:
- preparing a substrate including a driving area and a pixel area;
- forming a first transistor on the driving area;
- and
- forming a second transistor on the pixel area,
- wherein a first hydrogen diffusion barrier film is provided between a first active layer and a first gate insulating film of the first transistor;
- and
- a second hydrogen diffusion barrier film is provided between a second active layer and a second gate insulating film of the second transistor,
- wherein the forming of the first transistor comprises:
- forming a preliminary active layer on the driving area;
- forming the first active layer by crystallizing the preliminary active layer;
- forming the first hydrogen diffusion barrier film on the first active layer;
- forming the first gate insulating film on the first hydrogen diffusion barrier film formed on the driving area;
- forming a first gate electrode on the first gate insulating film disposed on the first active layer;
- and
- forming a first source electrode and a first drain electrode, passing through the first gate insulating film to come into contact with both sides of the first active layer.
12 more elements
Dependencies are inferred from the claim text.