Method of making amphi-FET structure and method of designing

A method of designing a semiconductor device, the method comprising:

• receiving a layout of a device, wherein the device is designed to be formed on a single side of a substrate, and the layout comprises a plurality of routing tracks;
• cutting the layout along a first direction, wherein the first direction is parallel to the plurality of routing tracks or perpendicular to the plurality of routing tracks;
• dividing the cut layout into a first cell and a second cell based on a location of the cutting, wherein the first cell comprises a first gate structure, and the second cell comprises a second gate structure;
• and
• inserting a gate via into the first cell or the second cell, wherein the gate via is positioned to directly connect to the first gate structure and to directly connect to the second gate structure.

A method of making a semiconductor device, the method comprising:

• forming a first electrode surrounding a first portion of a first active region on a first side of a substrate;
• forming a second electrode surrounding a second portion of a second active region on a second side of the substrate;
• and
• forming a through substrate via extending through the substrate, wherein the through substrate via directly contacts both the first electrode and the second electrode.