Semiconductor device

A semiconductor device, comprising:

• a substrate;
• transistors arranged side by side in one direction over a surface of the substrate and connected in parallel, the transistors each including a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer;
• at least one passive element disposed on at least one of regions between two adjacent ones of the transistors;
• collector electrodes arranged such that each of the collector electrodes is located between the substrate and the collector layer of a corresponding one of the transistors and is electrically connected to the collector layer;
• and
• an interlayer insulating film that covers the transistors and a region of the substrate on which none of the transistors is disposed, wherein
• the at least one passive element is disposed on the interlayer insulating film.

A semiconductor device, comprising:

• a substrate;
• transistors arranged side by side in one direction over a surface of the substrate and connected in parallel, the transistors each including a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer;
• at least one passive element disposed on at least one of regions between two adjacent ones of the transistors;
• collector electrodes arranged such that each of the collector electrodes is located between the substrate and the collector layer of a corresponding one of the transistors and is electrically connected to the collector layer;
• switching elements on the surface of the substrate over which the transistors are disposed, each of the transistors being provided with at least one of the switching elements;
• and
• a multilayer wiring structure disposed between the substrate and the collector electrodes in a manner so as to cover the switching elements, wherein
• the at least one passive element comprises a plurality of passive elements, and
• the multilayer wiring structure includes conductive members by which the collector electrodes connected to the transistors are connected to the respective passive elements, with at least one of the switching elements being disposed between each of the collector electrodes and a corresponding one of the passive elements.