Diode-triggered bidirectional silicon controlled rectifier and circuit
AssigneeChangxin Memory Technologies, Inc.
InventorsPan Mao, Yingtao Zhang, Junjie Liu, Lingxin Zhu, Bin Song, Qian Xu, Tieh-Chiang Wu
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AssigneeChangxin Memory Technologies, Inc.
InventorsPan Mao, Yingtao Zhang, Junjie Liu, Lingxin Zhu, Bin Song, Qian Xu, Tieh-Chiang Wu
Estimating the term…
The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.
A diode-triggered bidirectional silicon controlled rectifier, comprising a silicon controlled rectifier (SCR) and a diode string, the silicon controlled rectifier having an anode and a cathode and comprising:
A diode-triggered circuit, comprising:
The diode-triggered circuit according to 11, wherein the diode string comprises a fifth diode and a sixth diode;
The diode-triggered circuit according to 19, wherein the diode string comprises a fifth diode and a sixth diode;
Dependencies are inferred from the claim text.