Fabricating wafers with electrical contacts on a surface parallel to an active surface

A method comprising:

• obtaining a first carrier bonded to an upper surface of the silicon wafer, wherein one or more through silicon vias are extended through the silicon wafer and a passivation stack, wherein the passivation stack is disposed below a bottom surface of the silicon wafer, wherein a portion of each of the one or more through silicon vias is exposed through an opening of one or more openings in the passivation stack;
• fabricating one or more pillar bumps on the openings in the passivation stack;
• de-bonding the first carrier from the upper surface of the silicon wafer;
• and
• dicing the silicon wafer into subsections comprising dies.

A method comprising:

• obtaining a first carrier bonded to an upper surface of the silicon wafer, wherein one or more through silicon vias are extended through the silicon wafer and a passivation stack, wherein the passivation stack is disposed below a bottom surface of the silicon wafer, wherein a portion of each of the one or more through silicon vias is exposed through an opening of one or more openings in the passivation stack, wherein one or more electrical contacts are disposed on the one or more openings in the passivation stack;
• de-bonding the first carrier from the upper surface of the silicon wafer;
• and
• dicing the silicon wafer into subsections comprising dies.