Vertical semiconductor package including horizontally stacked dies and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJen-Yuan Chang, Chia-Ping Lai
Life of this patent
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Abstract
A semiconductor package includes a first connection die including a semiconductor substrate and an interconnect structure, and a first die stack disposed on the first connection die and including stacked dies, each of the stacked dies including a semiconductor substrate and an interconnect structure including a first connection line that is electrically connected to the interconnect structure of the first connection die. An angle formed between a plane of the first connection die and a plane of each stacked die ranges from about 45° to about 90°.
Claims20
A semiconductor package comprising:
- a first connection die comprising a first connection die substrate having a first connection die front side and an opposing first connection die back side that defines a plane of the first connection die, and a first connection die interconnect structure disposed on the first connection die front side;
- a second connection die comprising a second connection die substrate having a second connection die front side and an opposing second die backside that defines a plane of the second connection die, and a second connection die interconnect structure disposed on the second connection die front side;
- and
- first dies disposed in a first die stack having a first side that is bonded to the first connection die and an opposing second side that is bonded to the second connection die, each of the first dies comprising a first semiconductor substrate having a first die front side and an opposing first die backside that defines plane of the first die, and a first die interconnect structure disposed on the front side of the first semiconductor substrate and comprising a first die first connection line that is electrically connected to the first connection die interconnect structure,
- wherein an angle formed between the plane of the first connection die and the plane of a first die in the first die stack ranges from about 45° to about 90°, and
- wherein the plane of the first connection die is parallel to the plane of the second connection die.
A semiconductor package comprising:
- a first connection die comprising a first connection die substrate having a first connection die front side and an opposing first connection die backside that defines a plane of the first connection die, and a first connection die interconnect structure disposed on the first connection die front side;
- a second connection die comprising a second connection die substrate having a second connection die front side and an opposing second die backside that defines a plane of the second connection die, and a second connection die interconnect structure disposed on the second connection die front side;
- first dies disposed in a first die stack having a first side that is bonded to the first connection die and an opposing second side that is bonded to the second connection die, each of the first dies comprising a first semiconductor substrate having a first die front side and an opposing first die backside that defines a plane of the first die, and a first die interconnect structure disposed on the first die front side and comprising a first die first connection line that is exposed on the first side of the first die stack and electrically connected to the first connection die interconnect structure, and a first die second connection line that is exposed on the second side of the first die stack and electrically connected to the second connection die interconnect structure;
- and
- second dies disposed on the first connection die in a second die stack having a first side that is bonded to the first connection die and an opposing second side that is bonded to the second connection die, each of the second dies comprising a second semiconductor substrate having a second die front side and an opposing second die backside that defines a plane of the stacked second die, and second die interconnect structure comprising a second die first connection line that is electrically connected to the first connection die interconnect structure and a second die second connection line that is electrically connected to the second connection die interconnect structure,
- wherein the plane of a first die in the first die stack is perpendicular to the plane of the first connection die and the plane of the second connection die.
A semiconductor package comprising:
- a first connection die comprising a first connection die substrate having a first connection die front side and an opposing first connection die backside that defines a plane of the first connection die, and a first connection die interconnect structure disposed on the first connection die front side;
- a second connection die comprising a second connection die substrate having a second connection die front side and an opposing second die backside that defines a plane of the second connection die, and a second connection die interconnect structure disposed on the second connection die front side;
- and
- a first die stack having a first side that is bonded to the first connection die and an opposing second side that is bonded to the second connection die, the first die stack comprising first dies that are stacked on one another, each of the first dies comprising a first semiconductor substrate having a first die front side and an opposing first die backside that defines plane of the first die, and a first die interconnect structure disposed on the first die front side, the first die interconnect structure comprising a first die first connection line that is electrically connected to the first connection die interconnect structure and a first die second connection line that is electrically connected to the second connection die interconnect structure,
- wherein the plane of the first connection die is parallel to the plane of the second connection die, and
- wherein the first dies are stacked in a direction parallel to the planes of the first connection die and the second connection die.
Dependencies are inferred from the claim text.