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US 12,009,324 B2Granted
Semiconductor structure and method for forming semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorPing-Heng Wu
Life of this patent
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Abstract
A semiconductor structure and a forming method thereof are provided. The method of forming the semiconductor structure includes: providing a wafer having a front surface and a back surface opposite to the front surface; patterning the back surface of the wafer to form a groove extending from the back surface towards the front surface; forming a dielectric layer at a bottom and a side wall of the groove; and forming, on the dielectric layer, a conductive layer filling the groove.
Claims16
A method for forming a semiconductor structure, comprising:
- providing a wafer having a front surface and a back surface opposite to the front surface, wherein at least one conductive plug provided in the wafer extends from the front surface towards the back surface;
- patterning the back surface of the wafer to form at least one groove extending from the back surface towards the front surface, and exposing at least a portion of a surface of the at least one conductive plug;
- forming a dielectric layer at a bottom and a side wall of the at least one groove;
- and
- forming, on the dielectric layer, at least one conductive layer filling the at least one groove and extending from the back surface towards the front surface, wherein the at least one conductive layer is electrically connected to the at least one conductive plug.
2 more elements
A semiconductor structure, comprising:
- a wafer having a front surface and a back surface opposite to the front surface;
- at least one conductive plug, provided in the wafer, extending from the front surface towards the back surface;
- at least one groove located in the wafer and extending from the back surface towards the front surface;
- a dielectric layer covering a bottom and a side wall of the at least one groove;
- and
- at least one conductive layer located on a side of the dielectric layer away from the wafer and filling the at least one groove, wherein the at least one conductive layer extends from the back surface towards the front surface, and the at least one conductive layer is electrically connected to the at least one conductive plug.
3 more elements
Dependencies are inferred from the claim text.