Semiconductor structure

A semiconductor structure, comprising:

• a first semiconductor device, wherein the first semiconductor device comprises:
• a first etching stop layer;
• a first oxide layer below the first etching stop layer;
• and
• a first bonding via through the first oxide layer and the first etching stop layer;
• a second semiconductor device formed below the first semiconductor device, wherein the second semiconductor device comprises:
• a second etching stop layer;
• a second oxide layer formed over the second etching stop layer;
• a second bonding via formed through the second oxide layer and the second etching stop layer;
• and
• a hybrid bonding structure comprising the first bonding via bonded to the second bonding via, wherein the first bonding via has a top surface and a bottom surface, and the first bonding via has a width that is tapered from the bottom surface to the top surface.

A semiconductor structure, comprising:

• a first bonding layer, wherein the first bonding layer is not made of oxide;
• a first dummy pad formed in the first bonding layer;
• and
• a second dummy pad formed in a second bonding layer;
• and
• a hybrid bonding structure comprising the first bonding layer bonded to the second bonding layer and the first dummy pad bonded to the second dummy pad, wherein the first dummy pad is in direct contact with the second dummy pad.