Package structure with through-via in molding compound and dielectric layer

A package structure, comprising:

• a first dielectric layer;
• a first redistribution line in the first dielectric layer;
• a semiconductor device over the first dielectric layer;
• a molding compound around the semiconductor device and over the first dielectric layer;
• a through-via in the first dielectric layer and the molding compound, wherein the first dielectric layer has an inner sidewall in contact with the through-via, and the through-via has a bottom in contact with a topmost position of the first redistribution line;
• a second dielectric layer over the molding compound and the semiconductor device, wherein an entirety of a sidewall of the through-via higher than the molding compound is in contact with an inner sidewall of the second dielectric layer;
• and
• a second redistribution line over the second dielectric layer and over the through-via.

A package structure, comprising:

• a semiconductor device;
• a molding compound around the semiconductor device;
• a first dielectric layer below the molding compound;
• a redistribution line in the first dielectric layer;
• a second dielectric layer over the molding compound;
• and
• a through-via in the molding compound and extending beyond an entire height of the molding compound, wherein a top end of the through-via is lower than a top surface of the second dielectric layer, the through-via has a bottom in contact with a topmost position of the redistribution line, and an entirety of a sidewall of the through-via higher than the molding compound is in contact with an inner sidewall of the second dielectric layer.