Control of warpage using ABF GC cavity for embedded die package

A semiconductor package, comprising:

• a die having a first side and a second side opposite the first side, the die having a first lateral sidewall and a second lateral sidewall, and the die having electronic circuitry on the second side of the die;
• a plurality of conductive contacts electrically coupled to the electronic circuitry of the die;
• a reinforcement layer having a first portion laterally adjacent to and in contact with the first lateral sidewall of the die, the reinforcement layer having a second portion laterally adjacent to and in contact with the second lateral sidewall of the die, and the reinforcement layer having a thickness less than a thickness of the die;
• a dielectric material on and in direct physical contact with the second side of the die and on the surface of the reinforcement layer;
• a first conductive via through the dielectric material, the first conductive via coupled to a first of the plurality of conductive contacts;
• a second conductive via through the dielectric material, the second conductive via coupled to a second of the plurality of conductive contacts;
• a first conductive trace on the dielectric material, the first conductive trace in contact with the first conductive via;
• a second conductive trace on the dielectric material, the second conductive trace in contact with the second conductive via;
• a first solder bump coupled to the first conductive trace, the first solder bump outside of a periphery of the die and inside a periphery of the reinforcement layer, wherein the first conductive trace extends from inside the periphery of the die to a location vertically over the first solder bump;
• and a second solder bump coupled to the second conductive trace, the second solder bump outside of the periphery of the die and inside the periphery of the reinforcement layer, wherein the second conductive trace extends from inside the periphery of the die to a location vertically over the second solder bump, and wherein there are no solder bumps inside of the periphery of the die.

A semiconductor package, comprising:

• a die having a first side and a second side opposite the first side, and the die having a first lateral sidewall and a second lateral sidewall;
• a plurality of conductive contacts at the second side of the die;
• a reinforcement layer having a first portion laterally adjacent to and in contact with the first lateral sidewall of the die, the reinforcement layer having a second portion laterally adjacent to and in contact with the second lateral sidewall of the die, and the reinforcement layer having a thickness less than a thickness of the die;
• a dielectric material on and in direct physical contact with the second side of the die and on the surface of the reinforcement layer;
• a first conductive via through the dielectric material, the first conductive via coupled to a first of the plurality of conductive contacts;
• a second conductive via through the dielectric material, the second conductive via coupled to a second of the plurality of conductive contacts;
• a first conductive trace on the dielectric material, the first conductive trace in contact with the first conductive via;
• a second conductive trace on the dielectric material, the second conductive trace in contact with the second conductive via;
• a first solder bump electrically coupled to the first conductive trace, the first solder bump outside of a periphery of the die and inside a periphery of the reinforcement layer, wherein the first conductive trace extends from inside the periphery of the die to a location vertically over the first solder bump;
• and a second solder bump electrically coupled to the second conductive trace, the second solder bump outside of the periphery of the die and inside the periphery of the reinforcement layer, wherein the second conductive trace extends from inside the periphery of the die to a location vertically over the second solder bump, and wherein there are no solder bumps inside of the periphery of the die.