Semiconductor structure and method of manufacturing a semiconductor structure

A semiconductor structure, comprising:

• a first die having a first surface and a second surface opposite to the first surface;
• a second die adjacent to the first die and having a third surface and a fourth surface opposite to the third surface;
• a redistribution layer (RDL) under the first surface of the first die and the third surface of the second die, and including an interconnect structure electrically connected to the first die and the second die;
• a first conductive bump between the RDL and the first surface of the first die;
• a second conductive bump between the RDL and the third surface of the second die;
• a first underfill between the RDL and the first surface of the first die and surrounding the first conductive bump;
• a second underfill between the RDL and the third surface of the second die and surrounding the second conductive bump;
• a molding over the RDL and surrounding the first die and the second die;
• an adhesive over the molding, the second surface of the first die and the fourth surface of the second die;
• and
• a support element over the molding and the second surface of the first die and the fourth surface of the second die,
• wherein at least a portion of the molding is disposed between the first underfill and the second underfill,
• the portion of the molding is in contact with the first die, the second die, the first underfill and the second underfill,
• a width of the molding is substantially greater than a width of the adhesive,
• the width of the molding is substantially greater than a width of the support element, and
• the width of the adhesive is substantially equal to the width of the support element.

A semiconductor structure, comprising:

• a redistribution layer (RDL) including an interconnect structure;
• a support element over the RDL;
• a first die having a first surface electrically connected to the interconnect structure and a second surface opposite to the first surface, wherein the first die is disposed between the RDL and the support element;
• a second die having a third surface electrically connected to the interconnect structure and a fourth surface opposite to the third surface, wherein the second die is disposed between the RDL and the support element and adjacent to the first die;
• a first underfill disposed under the first surface of the first die and above the RDL;
• a second underfill disposed under the third surface of the second die and above the RDL;
• and
• a molding surrounding the first die, the second die, the first underfill and the second underfill, and disposed between the RDL and the support element;
• an adhesive between the support element and the molding,
• wherein a portion of the molding is in contact with the first underfill, the second underfill, the first die and the second die,
• a width of the molding is substantially greater than a width of the adhesive,
• the width of the molding is substantially greater than a width of the support element, and
• the width of the adhesive is substantially equal to the width of the support element.