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US 12,009,296 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWei-Kai Shih
Life of this patent
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Abstract
Semiconductor device and method of forming the same are disclosed. One of the semiconductor devices includes a semiconductor substrate, a passivation layer and a conductive pattern. The semiconductor substrate includes a conductive pad thereover. The passivation layer over the semiconductor substrate. The conductive pattern is penetrating through the passivation layer and electrically connected to the conductive pad, wherein a sidewall of the conductive pattern has at least one turning point.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate, comprising a conductive pad thereover;
- a passivation layer over the semiconductor substrate;
- a post-passivation interconnect (PPI) structure, disposed over the passivation layer and electrically connected to the conductive pad, wherein the PPI structure comprises a first portion including a first sidewall, a second sidewall and a bottom, the second sidewall is disposed between the first sidewall and the bottom, a first angle formed between the first sidewall and the second sidewall is an obtuse angle, and a second angle formed between the second sidewall and the bottom is an obtuse angle, wherein part of the first portion is partially embedded in the conductive pad;
- and
- a conductive terminal, disposed over and electrically connected to the PPI structure.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate, comprising a conductive pad thereover;
- a passivation layer over the semiconductor substrate;
- a post-passivation interconnect (PPI) structure disposed over the passivation layer and electrically connected to the conductive pad, wherein the PPI structure comprises a first portion including a first sidewall, a second sidewall and a bottom, the second sidewall being disposed between the first sidewall and the bottom, wherein a first angle formed between the first sidewall and the second sidewall is an obtuse angle, and a second angle formed between the second sidewall and the bottom is an obtuse angle, wherein the conductive pad has an inclined sidewall contacting with and electrically connecting to the first portion of the PPI structure;
- and
- a conductive terminal, disposed over and electrically connected to the PPI structure.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate, comprising a conductive pad thereover;
- a passivation layer over the semiconductor substrate;
- a post-passivation interconnect (PPI) structure, disposed over the passivation layer and electrically connected to the conductive pad, wherein the PPI structure comprises a first portion including a first surface, a first sidewall, a second sidewall and a bottom, the first surface is in direct contact with the passivation layer, the first sidewall is disposed between the first surface and the second sidewall, the second sidewall is disposed between the first sidewall and the bottom, a first angle formed between the first sidewall and the second sidewall is an obtuse angle, and a second angle formed between the second sidewall and the bottom is an obtuse angle;
- and
- a conductive terminal, disposed over and electrically connected to the PPI structure.
2 more elements
Dependencies are inferred from the claim text.