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US 12,009,250 B2Granted
Semiconductor device and a method making the same
AssigneeChangxin Memory Technologies, Inc.
InventorsZhan Ying, Qiang Zhang, Yiming Zhu
Life of this patent
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Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate includes a plurality of first trenches and a first pattern having an array of lines each formed between adjacent two of the plurality of first trenches; forming a first dielectric layer to cover at least the sidewalls of each of the lines in the array of the first pattern; and each of the lines in the array of the first pattern is segmented to form elements of a second pattern.
Claims19
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, wherein the substrate comprises a plurality of first trenches;
- forming a first pattern, wherein the first pattern comprises an array of lines each disposed between two adjacent ones of the plurality of first trenches;
- forming a first dielectric layer, wherein the first dielectric layer covers at least sidewalls of the array of lines of the first pattern;
- and
- segmenting the first pattern to form a second pattern, wherein forming the first dielectric layer covering the at least the sidewalls of the first pattern further comprises:
- forming the first dielectric layer on the sidewalls of the array of lines of the first pattern and bottom surfaces of the plurality of first trenches, and
- removing the first dielectric layer from the bottom surf aces of the plurality of first trenches, and wherein after forming the first dielectric layer covering the sidewalls of the first pattern and before segmenting the first pattern, the method further comprises:
- forming a third dielectric layer in the plurality of first trenches, wherein the third dielectric layer fills the plurality of first trenches.
5 more elements
A semiconductor structure, comprising:
- a substrate;
- and
- a second pattern disposed on the substrate, wherein the second pattern is formed by a method comprising:
- disposing a plurality of first trenches on the substrate;
- forming a first pattern, wherein the first pattern comprises an array of lines each disposed between two adjacent ones of the plurality of first trenches;
- forming a first dielectric layer, wherein the first dielectric layer covers at least sidewalls of the array of lines of the first pattern;
- and
- segmenting the first pattern to form the second pattern, wherein forming the first dielectric layer covering at least the sidewalls of the first pattern further comprises:
- forming the first dielectric layer on the sidewalls of the array of lines of the first pattern and bottom surfaces of the plurality of first trenches, and
- removing the first dielectric layer from the bottom surfaces of the plurality of first trenches, and wherein after forming the first dielectric layer covering the sidewalls of the first pattern and before segmenting the first pattern, the method further comprises:
- forming a third dielectric layer in the plurality of first trenches, wherein the third dielectric layer fills the plurality of first trenches.
8 more elements
Dependencies are inferred from the claim text.