Apparatus for fabricating a semiconductor device and method for fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Chien Huang, Chung-Hung Lin, Chih-Wei Wen
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Abstract
The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.
Claims20
A method for fabricating a semiconductor structure, comprising:
- disposing a mask at a first position in a first chamber;
- inspecting the mask in the first chamber;
- generating a first plurality of ions toward the mask by a first ionizer in the first chamber;
- generating a second plurality of ions toward the mask by a second ionizer in a second chamber different from the first chamber;
- and
- irradiating actinic radiation through the mask in the second chamber.
A method for fabricating a semiconductor structure, comprising:
- removing a mask from a carrier by an arm, thereby exposing the mask to an environment outside of the carrier;
- inspecting the mask in an accommodation chamber after removing the mask from the carrier;
- generating a first plurality of ions toward the mask by a first ionizer in the accommodation chamber;
- and
- irradiating actinic radiation through the mask in a processing chamber different from the accommodation chamber.
A method for fabricating a semiconductor structure, comprising:
- loading a mask in an inspection chamber;
- transferring the mask into a processing chamber;
- exposing a photoresist layer with actinic radiation through the mask in the processing chamber;
- and
- transferring the mask into the inspection chamber.
Dependencies are inferred from the claim text.