Semiconductor device and method of forming same

A method, comprising:

• forming sensing features adjacent to a first substrate;
• forming a pad adjacent to the first substrate, the pad being laterally displaced from the sensing features;
• forming a first dielectric layer adjacent to the sensing features and the pad, the first dielectric layer comprising a polyimide, the polyimide comprising an electron-attracting functional group;
• performing a laser grooving on the first dielectric layer and the first substrate, wherein after the laser grooving the first dielectric layer comprises curved sidewalls;
• singulating the first substrate to form an integrated circuit die;
• attaching the integrated circuit die to a second substrate;
• and
• removing the first dielectric layer to expose the sensing features and the pad.

A method, comprising:

• forming an integrated circuit die, forming the integrated circuit die comprising:
• forming a sensing feature and a conductive pad over a wafer substrate;
• depositing a polyimide layer over the wafer substrate, the sensing features, and the conductive pad;
• and
• performing a singulation process through the polyimide layer and the wafer substrate;
• attaching the integrated circuit die to a carrier substrate;
• forming an encapsulant over the carrier substrate and around the integrated circuit die;
• performing a selective etch process on the polyimide layer to form a first opening;
• depositing a first dielectric layer over the encapsulant and in the opening;
• performing an etch process on the first dielectric layer to form a second opening and a third opening, the second opening exposing the conductive pad, the third opening exposing the sensing feature;
• and
• forming a first redistribution structure over the first dielectric layer and in the second opening and the third opening, the first redistribution structure being electrically connected to the conductive pad.