US 12,009,217 B2 · Substrate processing method and substrate processing apparatus

Abstract

Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

Claims8

Dependent claims

A substrate processing method comprising:

providing a substrate in a processing container;
forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles;
modifying the metal-containing nitride film by generating plasma in the processing container;
and
repeating the forming the metal-containing nitride film and the modifying the metal-containing nitride film for a second predetermined number of cycles,
wherein a cycle ratio between the supplying the organic metal-containing gas and the nitrogen-containing gas alternately and the modifying the metal-containing nitride film is in a range of 5:1 to 10:1.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/593,071Filed 4 Mar 2020

Priority

JP 2019-04634613 Mar 2019

Published

US 2022/0189779 A116 Jun 2022

Granted

11 Jun 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10P 14/418
Of conductive or resistive materials: the conductive layers comprising transition metals
C23C 14/0617
Characterised by the coating material: aIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C23C 16/34
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: nitrides
C23C 16/4554
Use of plasma, radiation or electromagnetic fields: plasma being used non-continuously in between ALD reactions

Substrate processing method and substrate processing apparatus

Life of this patent

Substrate processing method and substrate processing apparatus

Life of this patent

Abstract

Claims8